This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical. BSIM and IC simulation. Circuit simulation and compact models. BSIM – the beginning. BSIM3 – a compact model based on new MOSFET physics. : BSIM4 and MOSFET Modeling for IC Simulation (International Series on Advanced in Solid State Electronics and Technology).

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Saturation junction leakage current and zero-bias capacitance models. Introduction and chapter objectives.

BSIM4 and MOSFET Modeling For IC Simulation

Bibliography Includes bibliographical references and index. Connections of a multi-transistor stack. Source and drain of a transistor with multiple gate fingers. Physical mechanisms of diode DC currents. Channel DC current and output resistance. Composite stamps for transient NQS model.


BSIM4 and MOSFET modeling for IC simulation [electronic resource] in SearchWorks catalog

Publication date Series International series on advances in simulationn state electronics and technology Reproduction Electronic reproduction. Available to subscribing institutions. World Scientific Publishing Co. Diode temperature-dependence model [4]. Fringing and overlap capacitances. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model.

Velocity saturation and velocity overshoot.

Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design. Find it at other libraries via WorldCat Limited preview.

BSIM4 diode charge and capacitance [4].

SearchWorks Catalog

ISBN electronic bk. The intent of this book ch. Intrinsic charge and capacitance models. Charge and capacitance models. SearchWorks Catalog Stanford Libraries.


Non-quasi-static and parasitic gate and body resistances. Nielsen Book Data BSIM – the beginning.

Noise representations and parameters. BSIM4 channel thermal noise models. Skip to search Skip to main content.

Physical description xix, p. Junction diode IV and CV modeping. Circuit simulation and compact models. BSIM4 junction leakage due to trap-assisted tunneling [4]. Source and drain parasitics: Describe the connection issue.

Review of the charge-deficit transient NQS model. Source and drain area and perimeter calculation. BSIM4 flicker noise models. Channel current in subthreshold and linear operations. BSIM4 – aimed for nm down to 20nm nodes. World Scientific Full view.